Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
نویسندگان
چکیده
منابع مشابه
Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer ...
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ژورنال
عنوان ژورنال: Science and Technology of Advanced Materials
سال: 2012
ISSN: 1468-6996,1878-5514
DOI: 10.1088/1468-6996/13/1/013002